BA6409F

2-phase half-wave motor pre-driver

DTQ6409

P-Channel40-V(D-S)MOSFET

FEATURES •100RgandUISTested •DT-TrenchPowerMOSFET APPLICATIONS •Notebook -LoadSwitch

HD6409

CMOSManchesterEncoder-Decoder

Description TheHD-6409ManchesterEncoder-Decoder(MED)isahighspeed,lowpowerdevicemanufacturedusingself-alignedsilicongatetechnology.Thedeviceisintendedforuseinserialdatacommunication,andcanbeoperatedineitheroftwomodes.Intheconvertermode,theMEDconvertsNo

HD-6409

CMOSManchesterEncoder-Decoder

Description TheHD-6409ManchesterEncoder-Decoder(MED)isahighspeed,lowpowerdevicemanufacturedusingself-alignedsilicongatetechnology.Thedeviceisintendedforuseinserialdatacommunication,andcanbeoperatedineitheroftwomodes.Intheconvertermode,theMEDconvertsNo

HD-6409

CMOSManchesterEncoder-Decoder

HD-6409

CMOSManchesterEncoder-Decoder

HD-6409

CMOSManchesterEncoder-Decoder

HD-6409

CMOSManchesterEncoder-Decoder

TheHD-6409ManchesterEncoder-Decoder(MED)isahigh speed,lowpowerdevicemanufacturedusingself-aligned silicongatetechnology.Thedeviceisintendedforusein serialdatacommunication,andcanbeoperatedineitherof twomodes.Intheconvertermode,theMEDconvertsNon return-t

HM6409

P-ChannelEnhancementModePowerMOSFET

Description TheHM6409usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. Features ●VDS=-20V,ID=-5.0A RDS(ON)

HM6409AE

20VP-ChannelEnhancement-ModeMOSFET

VDS=-20V RDS(ON),Vgs@-1.8V,Ids@-2.0A=73mΩ RDS(ON),Vgs@-2.5V,Ids@-4.0A=54mΩ RDS(ON),Vgs@-4.5V,Ids@-5.5A=43mΩ Features Advancedtrenchprocesstechnology HighDensityCellDesignForUltraLowOn-Resistance PackageDimensions