| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
BuildinBiasingCircuitMOSFETICUHF/VHFRFAmplifier Features •BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoise;NF=1.8dBtyp.atf=900MHz •Highgain;PG=22dBtyp.atf=900MHz •WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Providemini | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
BuildinBiasingCircuitMOSFETICUHF/VHFRFAmplifier Features •BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoise;NF=1.8dBtyp.atf=900MHz •Highgain;PG=22dBtyp.atf=900MHz •WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Providemini | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
BuildinBiasingCircuitMOSFETICUHF/VHFRFAmplifier Features •BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoise;NF=1.8dBtyp.atf=900MHz •Highgain;PG=22dBtyp.atf=900MHz •WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Providemini | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
BuiltinBiasingCircuitMOSFETICUHFRFAmplifier Features •BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoise;NF=1.8dBtyp.atf=900MHz •Highgain;PG=22dBtyp.atf=900MHz •WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Providemini | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
BuiltinBiasingCircuitMOSFETICUHFRFAmplifier Features •BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoise;NF=1.8dBtyp.atf=900MHz •Highgain;PG=22dBtyp.atf=900MHz •WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Providemini | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
BuiltinBiasingCircuitMOSFETICUHFRFAmplifier Features •BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoise;NF=1.8dBtyp.atf=900MHz •Highgain;PG=22dBtyp.atf=900MHz •WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Providemini | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
BuildinBiasingCircuitMOSFETICUHF/VHFRFAmplifier Features •BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoise;NF=1.8dBtyp.atf=900MHz •Highgain;PG=22dBtyp.atf=900MHz •WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Providemini | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
BuiltinBiasingCircuitMOSFETICUHFRFAmplifier Features •BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoise;NF=1.8dBtyp.atf=900MHz •Highgain;PG=22dBtyp.atf=900MHz •WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Providemini | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
BA/BCSeries:1.5-6.0WattsSingleandDualOutputs FEATURES •InputπFilter •FullyRegulatedOutputs •IndustryStandardPinouts •5,12,24,28,and48VDCInputs •RippleandNoiseLessThan50mVpp •Input/OutputIsolation | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
NPNSiliconDigitalTransistor(Switchingcircuit,inverter,interfacecircuit,drivecircuit) NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit,drivecircuit •Builtinbiasresistor(R1=2.2kΩ,R2=2.2kΩ) | SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司 | SIEMENS |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ROHM |
23+ |
DIP |
12335 |
询价 | |||
ROHN |
24+ |
DIP |
21322 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
ROHN |
24+ |
DIP |
37500 |
全新原装现货,量大价优! |
询价 | ||
BEC |
2016+ |
DIP16 |
6523 |
只做原装正品现货!或订货! |
询价 | ||
BEC |
24+ |
BEC |
3600 |
绝对原装!现货热卖! |
询价 | ||
ROHM |
23+ |
DIP |
9280 |
价格优势、原装现货、客户至上。欢迎广大客户来电查询 |
询价 | ||
BEC |
24+ |
DIP |
1000 |
新 |
询价 | ||
BEC |
24+ |
DIP/16 |
1068 |
原装现货假一罚十 |
询价 | ||
BEC |
96/97+ |
DIP/16 |
418 |
原装现货海量库存欢迎咨询 |
询价 | ||
BEC |
23+ |
NA |
8021 |
专业电子元器件供应链正迈科技特价代理特价，原装元器件供应，支持开发样品 |
询价 |
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