AM band-switching diode

DESCRIPTION Planar band-switching diode in a hermetically sealed glass SOD68 (DO-34) package. FEATURES • Continuous reverse voltage: max. 20 V • Continuous forward current: max. 50 mA • Low diode capacitance: max. 2.5 pF • Low diode forward resistance: max. 1.2 Ω. APPLICATION • Band switch

文件：31.74 Kbytes 页数：4 Pages

PHI

PHI

AM band-switching diode

DESCRIPTION Leadless diode in a hermetically-sealed glass SOD80C SMD package with lead/tin plated metal discs at each end. FEATURES • Continuous reverse voltage: max. 20 V • Continuous forward current: max. 50 mA • Low diode capacitance: max. 2.5 pF • Low diode forward resistance: max. 1.2 Ω

文件：29.23 Kbytes 页数：4 Pages

PHI

PHI

AM band-switching diode

恩XP

High Voltage Transistors(PNP)

High Voltage Transistors PNP Silicon

文件：119.62 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

High Voltage Transistors(PNP Silicon)

High Voltage Transistors PNP Silicon

文件：82.29 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

POWER TRANSISTOR NPN SILICON

High-Voltage NPN Silicon Transistor . . . designed for medium–to–high voltage inverters, converters, regulators and switching circuits. • High Voltage — VCEX = 400 Vdc • Gain Specified to 3.5 Amp • High Frequency Response to 2.5 MHz

文件：98.98 Kbytes 页数：4 Pages

ONSEMI

安森美半导体