General Purpose Diodes

General Purpose Diodes • WIV 10 V to 100 V • trr 4ns (MAX) BA216-218

文件：35.17 Kbytes 页数：1 Pages

FAIRCHILD

仙童半导体

Operational Amplifiers

文件：597.13 Kbytes 页数：18 Pages

NSC

国半

Thyristors(Silicon Controlled Rectifiers)

. . . designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed. • Glass-Passivated Junctions • Blocking Voltage to 800 Volts • TO-220 Construction —

文件：83.7 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

Silicon PNP Transistor Audio Power Output

Description: The NTE218 is ideal for use as a driver, switch and medium–power amplifier applications. This device features: Features: • Low Saturation Voltage – 0.6VCE(sat) @ IC = 1A • High Gain Characteristics – hFE @ IC = 250mA: 30–100 • Excellent Safe Area Limits

文件：23.59 Kbytes 页数：2 Pages

NTE