Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification)

For low-frequency and low-noise amplification Complementary to 2SD661 and 2SD661A ■Features ● Low noise voltage NV. ● High foward current transfer ratio hFE. ● M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit boar

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PANASONIC

松下

SWITCHMODE??Schottky Power Rectifirer

SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers

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MOTOROLA

摩托罗拉

Integrated Circuit Audio Amplifier, 500mW

Description: the NTE745 is a monolithic complementary power amplifier and preamplifier designed to deliver 1/2–Watt into a loudspeaker with a 3.0mV(rms) typical input. Gain and bandwidth are externally adjustable. Typical applications include portable AM–FM radios, tape recorders, phonographs, an

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NTE

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Schottky rectifier diodes in a surface mounting plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. FEATURES • Low forward volt drop • Fast switching • Reverse surge capability • High thermal c

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PHI

PHI