0.5A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER

文件：59.62 Kbytes 页数：4 Pages

WTE

Won-Top Electronics

丝印：B5S；Package：SC70；SN74AHCT1G86Q-Q1 Automotive Single 2-Input Exclusive-OR Gate

1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: -40°C to +125°C – Device HBM ESD classification level 2 – Device CDM ESD classification level C4B • Operating range of 4.5V to 5.5V • Max tpd of 8ns at 5V • Low power consumption, 10μA max ICC • ±8mA

文件：1.17517 Mbytes 页数：25 Pages

TI

德州仪器

20-BIT TWO PORT BUS SWITCH WITH 25OHM SERIES RESISTOR IN OUTPUT

DESCRIPTION The B5S162861 is an advanced high-speed CMOS 20-BIT TWO PORT BUS SWITCH fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS tecnology. It is ideal for 4V to 5.5V V CC operations and ultra-low power and low noise applications, typically notebook and docking stat

文件：197.93 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

20-BIT TWO PORT BUS SWITCH WITH 25OHM SERIES RESISTOR IN OUTPUT

DESCRIPTION The B5S162861 is an advanced high-speed CMOS 20-BIT TWO PORT BUS SWITCH fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS tecnology. It is ideal for 4V to 5.5V V CC operations and ultra-low power and low noise applications, typically notebook and docking stat

文件：197.93 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

20-BIT TWO PORT BUS SWITCH WITH FOUR ENABLE CONTROL AND 25W SERIES RESISTOR IN OUTPUT

DESCRIPTION The B5S162862 is an advanced high-speed CMOS 20-BIT TWO PORT BUS SWITCH fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS tecnology. It is ideal for 4V to 5.5V VCC operations and ultra-low power and low noise applications, typically notebook and docking stat

文件：208.13 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

20-BIT TWO PORT BUS SWITCH WITH FOUR ENABLE CONTROL AND 25W SERIES RESISTOR IN OUTPUT

DESCRIPTION The B5S162862 is an advanced high-speed CMOS 20-BIT TWO PORT BUS SWITCH fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS tecnology. It is ideal for 4V to 5.5V VCC operations and ultra-low power and low noise applications, typically notebook and docking stat

文件：208.13 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

20-BIT TWO PORT BUS SWITCH

DESCRIPTION The B5S16861 is an advanced high-speed CMOS 20-BIT TWO PORT BUS SWITCH fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. It is ideal for 4V to 5.5V VCC operations and ultra-low power and low noise applications, typically notebook and docking stat

文件：189.62 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

20-BIT TWO PORT BUS SWITCH

DESCRIPTION The B5S16861 is an advanced high-speed CMOS 20-BIT TWO PORT BUS SWITCH fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. It is ideal for 4V to 5.5V VCC operations and ultra-low power and low noise applications, typically notebook and docking stat

文件：189.62 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

20-BIT TWO PORT BUS SWITCH WITH FOUR ENABLE CONTROL

DESCRIPTION The B5S16862 is an advanced high-speed CMOS 20-BIT TWO PORT BUS SWITCH fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS tecnology. ■ HIGH SPEED: tPD = 0.25ns (MAX.) at VCC = 4.5V TA=85°C ■ ON RESISTANCE BETWEEN TWO PORT: 5Ω (TYP) at VCC = 5.0V TA=25°C ■ L

文件：207.17 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

20-BIT TWO PORT BUS SWITCH WITH FOUR ENABLE CONTROL

DESCRIPTION The B5S16862 is an advanced high-speed CMOS 20-BIT TWO PORT BUS SWITCH fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS tecnology. ■ HIGH SPEED: tPD = 0.25ns (MAX.) at VCC = 4.5V TA=85°C ■ ON RESISTANCE BETWEEN TWO PORT: 5Ω (TYP) at VCC = 5.0V TA=25°C ■ L

文件：207.17 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体