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BAS21VD-Q

Marking:B5;Package:SOT457;High-voltage switching diodes

1.Generaldescription Triplehigh-voltageswitchingdiodes,encapsulatedinaSOT457(SC-74/TSOP6)smallSurface- MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Highswitchingspeed:trr≤50ns •Lowcapacitance:Cd≤5pF •Reversevoltage:VR≤200V •Repetitivepea

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BAT54C

Marking:B5;Package:SOT-23;Surface Mount Schottky Barrier Diode

FEATURES •LowTurn-onVoltage •FastSwitching •PNJunctionGuardRingforTransientandESDProtection

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

BC817-40QB

Marking:B5;Package:MO340-BA;45 V, 500 mA NPN general-purpose transistors

Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BC817-40QB-Q

Marking:B5;Package:MO340-BA;45 V, 500 mA NPN general-purpose transistors

Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •Qualifiedaccordingto

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BC847AT/DG

Marking:B5;Package:SOT-416;45 V, 100 mA NPN general-purpose transistors

DESCRIPTION NPNtransistorinaSOT23plasticpackage.PNPcomplements:BC856,BC857andBC858. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.65V). APPLICATIONS •Generalpurposeswitchingandamplification.

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

BC847ATSLASHDG

Marking:B5;Package:SOT-416;45 V, 100 mA NPN general-purpose transistors

DESCRIPTION NPNtransistorinaSOT23plasticpackage.PNPcomplements:BC856,BC857andBC858. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.65V). APPLICATIONS •Generalpurposeswitchingandamplification.

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

BCX54T

Marking:B5;Package:SC-62;45 V, 1 A NPN power bipolar transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BZT52H-C3V0

Marking:B5;Package:SOD123F;Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanSOD123FsmallandflatleadSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •Totalpowerdissipation:≤830mW •Threetoleranceseries:±1,±2andapproximately±5 •Wideworkingvoltagerange:nominal2.

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BZT52H-C3V0-Q

Marking:B5;Package:SOD123F;Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanSOD123FsmallandflatleadSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •Totalpowerdissipation:≤830mW •Threetoleranceseries:±1,±2andapproximately±5 •Wideworkingvoltagerange:nominal2.

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BZX84-C47

Marking:B5;Package:SOT23;Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX84-A),±2(BZX84-B)and approximately±5(BZX84-C)tolerancerange.Theseriesincludes37breakdownvolt

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

详细参数

  • 型号:

    B5

  • 制造商:

    Burndy

  • 功能描述:

    BW BCR1 4/0 TO 1/2

供应商型号品牌批号封装库存备注价格
Opto 22
2022+
1
全新原装 货期两周
询价
YEASHIN
23+
SOD323
15000
全新原装现货,价格优势
询价
TI/德州仪器
23+
SOT-89
50000
全新原装正品现货,支持订货
询价
HP
23+
10000
现货库存
询价
TI/德州仪器
24+
NA/
5250
原装现货,当天可交货,原型号开票
询价
TI
25+
SOT-89
2000
原装正品,假一罚十!
询价
TI/德州仪器
24+
SOT-89
60000
全新原装现货
询价
群鑫
22+
D3K
30000
原装正品,一级代理
询价
MPS/美国芯源
22+
QFN
25000
只做原装,原装,假一罚十
询价
TRR/熙隆/中性
22+
SOF2-4
20000
深圳原装现货正品有单价格可谈
询价
更多B5供应商 更新时间2025-6-21 9:50:00