BU4311G-TR

LowVoltageFreeDelayTimeSettingCMOSVoltageDetectorICSeries

GeneralDescription ROHM’sBU42xxandBU43xxseriesareCMOSVoltageDetectorICswithadjustableoutputdelay.Itisahigh-accuracy,lowcurrentconsumptionVoltageDetectorICserieswithabuilt-indelaycircuit.Thelineupwasestablishedwithtwooutputtypes(NchopendrainandCMOSoutput

BU4311G-TR

LowVoltageFreeDelayTimeSettingCMOSVoltageDetectorICSeries

GeneralDescription ROHM’sBU42xxandBU43xxseriesareCMOSVoltageDetectorICswithadjustableoutputdelay.Itisahigh-accuracy,lowcurrentconsumptionVoltageDetectorICserieswithabuilt-indelaycircuit.Thelineupwasestablishedwithtwooutputtypes(NchopendrainandCMOSoutput

C4311A

2C20SOLIDTCSR-PVCPVCCOMMUNICATIONCABLE

CED4311

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-33A,RDS(ON)=18mΩ@VGS=-10V. RDS(ON)=30mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CED4311

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-33A,RDS(ON)=18mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=30mW@VGS=-4.5V. Leadfreeproductisacquired.

CEM4311

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-9.3A,RDS(ON)=18mΩ@VGS=-10V. RDS(ON)=30mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage. ■Leadfreeproductisacquired.

CEM4311

P-ChannelMOSFETusesadvancedtrenchtechnology

CEM4311

P-Channel30-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •LoadSwitch •BatterySwitch

CEM4311

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-9.3A,RDS(ON)=18mW@VGS=-10V. RDS(ON)=30mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Lead-freeplating;RoHScompliant.

CEU4311

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-33A,RDS(ON)=18mΩ@VGS=-10V. RDS(ON)=30mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.