Silicon PNP triple diffusion planar type Darlington(For power amplification)

Silicon PNP triple diffusion planar type Darlington For power amplification ■ Features • Satisfactory forward current transfer ratio hFE characteristics • Wide area of safe operation (ASO) • Optimum for the output stage of a HiFi audio amplifier

文件：54.7 Kbytes 页数：2 Pages

PANASONIC

松下

抗辐射4M×36Bit QDR SRAM

BMTI

北京微电子

SWITCHMODE??Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse Avalanche

文件：80.01 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Schottky rectifier diodes in a plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR1645B series is supplied in the surface mounting SOT404 package. FEATURES • Low forward volt drop • Fast

文件：37.95 Kbytes 页数：5 Pages

PHI

PHI

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR1645F is supplied in the SOD100 package. The PBYR1645X is supplied in the

文件：41.31 Kbytes 页数：6 Pages

PHI

PHI