LDMOS 3-stage integrated Doherty MMIC

General description The B11G3338N80D is a dual section 3-stage fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in each section. This multiband device is perfec

文件：1.30833 Mbytes 页数：15 Pages

AMPLEON

安谱隆

Package：36-QFN 裸焊盘；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：B11G3338N80DYZ/PQFN-12X7/REELDP

Ampleon USA Inc.

LDMOS 3-stage integrated Doherty MMIC

General description The B11G3338N80D is a dual section 3-stage fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in each section. This multiband device is perfec

文件：1.30833 Mbytes 页数：15 Pages

AMPLEON

安谱隆

LDMOS 3-stage integrated Doherty MMIC

General description The B11G3338N80D is a dual section 3-stage fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in each section. This multiband device is perfec

文件：1.30833 Mbytes 页数：15 Pages

AMPLEON

安谱隆