B11G2327N70D分立半导体产品的晶体管-FETMOSFET-射频规格书PDF中文资料

厂商型号	B11G2327N70D
参数属性	B11G2327N70D 封装/外壳为36-QFN 裸焊盘；包装为卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带；类别为分立半导体产品的晶体管-FETMOSFET-射频；产品描述：B11G2327N70DYZ/PQFN-12X7/REELDP
功能描述	LDMOS 2-stage integrated Doherty MMIC
封装外壳	36-QFN 裸焊盘
文件大小	1.18296 Mbytes
页面数量	15 页
生产厂商	Ampleon
中文名称	安谱隆
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-10-6 15:10:00
人工找货	B11G2327N70D价格和库存，欢迎联系客服免费人工找货

General description

The B11G2327N70D is a dual path 2-stage fully integrated Doherty MMIC solution using

Ampleon's state of the art LDMOS technology. The carrier and peaking device, input

splitter, output combiner and pre-match are integrated in a single package. This multiband

device is perfectly suited as general purpose driver in the frequency range 2300 MHz to

2700 MHz. Available in PQFN outline.

Features and benefits

 Integrated input splitter

 Integrated output combiner

 20Ω output impedance thanks to integrated pre-match

 High linearity

 Designed for large RF and instantaneous bandwidth operation

 Independent control of carrier and peaking bias

 Integrated bias gate switch

 Integrated ESD protection

 Source impedance 50 Ω; high power gain

 For RoHS compliance see the product details on the Ampleon website

Applications

 Macrocell base station driver

 Microcell base station

 5G mMIMO

 W-CDMA/LTE

 Active antenna

 General purpose applications