B11G2327N70D分立半导体产品的晶体管-FETMOSFET-射频规格书PDF中文资料

B11G2327N70D属于分立半导体产品的晶体管-FETMOSFET-射频。由安谱隆制造生产的B11G2327N70D晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。

General description

The B11G2327N70D is a dual path 2-stage fully integrated Doherty MMIC solution using

Ampleon's state of the art LDMOS technology. The carrier and peaking device, input

splitter, output combiner and pre-match are integrated in a single package. This multiband

device is perfectly suited as general purpose driver in the frequency range 2300 MHz to

2700 MHz. Available in PQFN outline.

Features and benefits

 Integrated input splitter

 Integrated output combiner

 20Ω output impedance thanks to integrated pre-match

 High linearity

 Designed for large RF and instantaneous bandwidth operation

 Independent control of carrier and peaking bias

 Integrated bias gate switch

 Integrated ESD protection

 Source impedance 50 Ω; high power gain

 For RoHS compliance see the product details on the Ampleon website

Applications

 Macrocell base station driver

 Microcell base station

 5G mMIMO

 W-CDMA/LTE

 Active antenna

 General purpose applications