B11G1822N60D数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

The B11G1822N60D is a dual section 2-stage fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in each section. This multiband device is perfectly suited as general purpose driver in the frequency range 1800 MHz to 2200 MHz. Available in PQFN outline.

特性 Features

• Integrated input splitter
• Integrated output combiner
• 20 Ω output impedance thanks to integrated pre-match
• High linearity
• Designed for large RF and instantaneous bandwidth operation
• Independent control of carrier and peaking bias
• Integrated bias gate switch
• Integrated ESD protection
• Source impedance 50 Ω; high power gain
• For RoHS compliance see the product details on the Ampleon website

应用 Application

• Macrocell base station driver
• Microcell base station
• 5G mMIMO
• W-CDMA/LTE
• Active antenna
• General purpose applications

简介

B11G1822N60D属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的B11G1822N60D晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。