B11G1822N60D分立半导体产品的晶体管-FETMOSFET-射频规格书PDF中文资料

厂商型号	B11G1822N60D
参数属性	B11G1822N60D 封装/外壳为36-QFN 裸焊盘；包装为托盘；类别为分立半导体产品的晶体管-FETMOSFET-射频；产品描述：B11G1822N60DYZ/PQFN-12X7/REELDP
功能描述	LDMOS 2-stage integrated Doherty MMIC
封装外壳	36-QFN 裸焊盘
文件大小	1.18535 Mbytes
页面数量	15 页
生产厂商	Ampleon
中文名称	安谱隆
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-10-6 23:00:00
人工找货	B11G1822N60D价格和库存，欢迎联系客服免费人工找货

General description

The B11G1822N60D is a dual section 2-stage fully integrated Doherty MMIC solution

using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input

splitter, output combiner and pre-match are integrated in each section. This multiband

device is perfectly suited as general purpose driver in the frequency range 1800 MHz to

2200 MHz. Available in PQFN outline.

Features and benefits

 Integrated input splitter

 Integrated output combiner

 20 Ω output impedance thanks to integrated pre-match

 High linearity

 Designed for large RF and instantaneous bandwidth operation

 Independent control of carrier and peaking bias

 Integrated bias gate switch

 Integrated ESD protection

 Source impedance 50 Ω; high power gain

 For RoHS compliance see the product details on the Ampleon website

Applications

 Macrocell base station driver

 Microcell base station

 5G mMIMO

 W-CDMA/LTE

 Active antenna

 General purpose applications