B118

1WATT DC-DC CONVERTERS

B1181

Power Transistor

Features 1)Highbreakdownvoltageandhighcurrent.BVCEO=−80V,IC=−1A 2)GoodhFElinearity. 3)LowVCE(sat). 4)Complementsthe2SD1898/2SD1863/2SD1733.

B1182

Silicon PNP transistor in a TO-252 Plastic Package.

Descriptions SiliconPNPtransistorinaTO-252PlasticPackage. Features LowVCE(sat),complementsthe2SD1758. Applications Mediumpoweramplifierapplications.

B1182

Medium power Transistor(-32V, -2A)

●Features 1)LowVCE(sat). VCE(sat)=-0.5V(Typ.) (IC/IB=-2A/-0.2A) 2)Complementsthe2SD1766/ 2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/SD1227M. ●Structure Epitaxialplanartype PNPsilicontransistor

B1184

Power transistor

Features ●LowVCE(sat). ●PNPsilicontransistor. ●Epitaxialplanartype

B1185

Plastic-Encapsulated Transistors

TRANSISTOR(PNP) FEATURES Powerdissipation PCM:2W(Tamb=25℃) Collectorcurrent ICM:-3A Collector-basevoltage V(BR)CBO:-60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

B1185

Power Transistor (-60V, -3A)

●Features 1)LowVCE(sat). VCE(sat)=-0.5V(Typ.) (IC/IB=-2A/-0.2A) 2)Complementsthe2SD1760/2SD1864/2SD1762. ●Structure Epitaxialplanartype PNPsilicontransistor

B1186

Silicon PNP Power Transistors

DESCRIPTION ·WithTO-220Fapackage ·Lowcollectorsaturationvotlage ·Complementtotype2SD1763 ·Highbreakdownvoltage APPLICATIONS ·Foruseinlowfrequencypowerampliferapplications

B1187

Epitaxial Planar PNP Silicon Transistor

@Features 1)Largecollectorpowerdissipation: Po=30W(Te=25°C) 2)WideASO. 3)Complementarypairwith25D1761. 4)Easilyinsulatedfromtheheatdis- sipationplateasthefinismolded.

B118LB4S

11.8GHz Surface Mount Bandpass Filter

DESCRIPTION DLI’ssurfacemountcatalogbandpass filtersutilizeDLI’slowlosstemperature stablematerialswhichoffersmallsize andminimalperformancevariationover temperature.ThecatalogBPF’sare offeredinavarietyoffrequencybands, whichoffersadropinsolutionwithhighly