B10G3741N55DZ分立半导体产品的晶体管-FETMOSFET-射频规格书PDF中文资料

B10G3741N55DZ属于分立半导体产品的晶体管-FETMOSFET-射频。由安谱隆制造生产的B10G3741N55DZ晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。

General description

The B10G3741N55D is a 3-stage fully integrated asymmetrical Doherty MMIC solution

using Ampleon’s state of the art GEN10 LDMOS technology. The carrier and peaking

device, input splitter, output combiner and pre-match are integrated in a single package.

This multiband device is perfectly suited as a final stage for small cells and massive MIMO

applications in the frequency range from 3700 MHz to 4100 MHz. Available in PQFN

outline.

Features and benefits

 Integrated input splitter

 Integrated output combiner

 30 Ω output impedance thanks to integrated pre-match

 Very high efficiency thanks to asymmetry

 Designed for wideband operation (frequency 3700 MHz to 4100 MHz)

 Independent control of carrier and peaking bias

 Integrated ESD protection

 Source impedance 50 Ω; high power gain

 For RoHS compliance see the product details on the Ampleon website

Applications

 RF power MMIC for multi-carrier and multi-standard 5G, W-CDMA and LTE base

stations in the 3700 MHz to 4100 MHz frequency range