LDMOS 3-stage integrated Doherty MMIC

Features and benefits  Integrated input splitter  Integrated output combiner  Very high efficiency  Designed for broadband operation (frequency 4700 MHz to 5000 MHz)  Independent control of carrier and peaking bias  Integrated ESD protection  Excellent thermal stability  High power

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Ampleon

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LDMOS 3-stage integrated Doherty MMIC

The B10G3438N55D is a 3-stage fully integrated asymmetrical Doherty MMIC solution using Ampleon’s state of the art GEN10 LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in a single package. This multiband device is perfectly suited as a • Integrated input splitter\n• Integrated output combiner\n• 30 Ω output impedance thanks to integrated pre-match\n• Very high efficiency thanks to asymmetry\n• Designed for wideband operation (frequency 3400 MHz to 3800 MHz)\n• Independent control of carrier and peaking bias\n• Integrated ESD prote;

Ampleon

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LDMOS 3-stage integrated Doherty MMIC

The B10G3741N55D is a 3-stage fully integrated asymmetrical Doherty MMIC solution using Ampleon’s state of the art GEN10 LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in a single package. This multiband device is perfectly suited as a • Integrated input splitter\n• Integrated output combiner\n• 30 Ω output impedance thanks to integrated pre-match\n• Very high efficiency thanks to asymmetry\n• Designed for wideband operation (frequency 3700 MHz to 4100 MHz)\n• Independent control of carrier and peaking bias\n• Integrated ESD prote;

Ampleon

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LDMOS 3-stage integrated Doherty MMIC

The B10G4750N12DL is a 3-stage 12 W fully integrated Doherty MMIC solution using Ampleon's state of the art LDMOS technology. The carrier and peaking device, input splitter, output combiner, and output matching are integrated in a single package. This multiband device is perfectly suited as a genera • Integrated input splitter\n• Integrated output combiner\n• Very high efficiency\n• Designed for broadband operation (frequency 4700 MHz to 5000 MHz)\n• Independent control of carrier and peaking bias\n• Integrated ESD protection\n• Excellent thermal stability\n• High power gain, input and output m;

Ampleon

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包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：B10G3438N55DZ/REELDP

Ampleon USA Inc.

Package：20-QFN 裸露焊盘；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：IC 28V LDMOS RF SOT1462-1

Ampleon USA Inc.