74AHCT1G00DBVTG4

Marking：B00G；Package：SOT-23；Single 2-Input Positive-NAND Gate

74AHCT1G08DBVRE4

Marking：B08G；Package：SOT-23；Single 2-Input Positive-AND Gate

74AHCT1G08DBVRG4

Marking：B08G；Package：SOT-23；Single 2-Input Positive-AND Gate

DB006NG

Marking：B006N；Package：TO-252；N-Channel MOSFET uses advanced trench technology

NB003PG

Marking：B003P；Package：DFN5*6-8；P-Channel MOSFET uses advanced trench technology

PQMD10

Marking：B010；Package：DFN1010B-6；NPN/PNP resistor-equipped transistors; R1 = 2.2 k廓, R2 = 47 k廓

PQMD13

Marking：B011；Package：DFN1010B-6；NPN/PNP resistor-equipped transistors;R1 = 4.7 k廓, R2 = 47 k廓

PQMD2

Marking：B001；Package：DFN1010B-6；NPN/PNP resistor-equipped transistors;R1 = 22 k廓, R2 = 22 k廓

QB005DNG

Marking：B005DN；Package：DFN3*3-8E；Dual N N-Channel MOSFET uses advanced trench technology

RT9011-FSPJ6

Marking：B0-***；Package：SOT-26；Portable Power Management 300mA Dual LDO Regulator