AZ1365-06F.R7G中文资料晶焱科技数据手册PDF规格书

特性 Features

 ESD protect for super speed differential

signaling (above 10Gb/s) channels

 ESD protect USB3.1/3.0 TX+, TX-, RX+, and

RX- Pins operating up to 2.2V and below

 ESD protect USB2.0 D+ and D- Pins operating

up to 3.3V and below

 ESD protect USB VBus operating up to 5.0V

and below

 Provide transient protection for each channel

IEC 61000-4-2 (ESD) ±15kV (air), ±10kV (contact)

IEC 61000-4-5 (Lightning) 4A (8/20ms)

 Ultra low capacitance: 0.35pF typ.

 Fast turn-on and low clamping voltage

 Array of surge rated diodes with internal

equivalent TVS diode

 Solid-state silicon-avalanche and active circuit

triggering technology

 Green part

Applications

 USB3.1 and USB3.0

 Thunderbolt

 10G/5G/2.5G Ethernet

 High speed I/O ports in any electronic

product

描述 Description

AZ1365-06F is a design which includes ESD

rated diode arrays to protect high speed data

interfaces. The AZ1365-06F has been

specifically designed to protect sensitive

components which are connected to data and

transmission lines from over-voltage caused by

Electrostatic Discharging (ESD).

AZ1365-06F is a unique design which includes

surge rated, ultra low capacitance steering

diodes and a unique design of clamping cell

which is an equivalent TVS diode in a single

package. During transient conditions, the

steering diodes direct the transient to either the

power supply line or to ground line. The internal

unique design of clamping cell prevents

over-voltage on the power line, protecting any

downstream components.

AZ1365-06F may be used to meet the ESD

immunity requirements of IEC 61000-4-2, Level 4

(±15kV air, ±8kV contact discharge).