AZ111S-08F.R7G中文资料晶焱科技数据手册PDF规格书

Features

ESD protect for 8 high-speed I/O channels

Provide transient protection for each channel to

IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact)

IEC 61000-4-5 (Lightning) 3A (8/20ms)

For low operating voltage of 1.5V and below

Ultra-low capacitance: 0.1pF typical

Fast turn-on and low clamping voltage

Array of ESD rated diodes with internal

equivalent TVS (Transient Voltage

Suppression) diode

Solid-state silicon-avalanche and active circuit

triggering technology

Simplified layout for high-speed differential

signaling channels

Green part

Applications

V-by-One interface

LVDS Interface

USB 3.0 and USB 3.1 interfaces

DisplayPort interface

SATA and eSATA interfaces

Description

AZ111S-08F is a design which includes ESD

rated diode arrays to protect high speed data

interfaces. The AZ111S-08F has been

specifically designed to protect sensitive

components which are connected to data and

transmission lines from over-voltage caused by

Electrostatic Discharging (ESD).

AZ111S-08F is a unique design which includes

ESD rated, ultra-low capacitance steering diodes

and a unique design of clamping cell which is an

equivalent TVS diode in a single package. During

transient conditions, the steering diodes direct

the transient to the ground line. The internal

unique design of clamping cell prevents

over-voltage on the I/O line, protecting any

downstream components.

AZ111S-08F may be used to meet the ESD

immunity requirements of IEC 61000-4-2, Level 4

(±15kV air, ±8kV contact discharge).