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AZ101KE

PulsEaterCeramicCompositionAvailableinE12Ohmicvalues

The“A”Seriesnon-inductive,ceramiccompositeresistorsaredesignedforavarietyofapplicationswherehighenergyhandlingcapabilitiesarecrucial.Theseresistorsareidealforanyapplicationwhichissubjecttosurges,highpeakpower,orimpulseenergy. Theiruniquedesignallowsunifor

OHMITEOHMITE MANUFACTURING COMPANY

欧敏欧敏电阻制造公司

B101

1WATTDC-DCCONVERTERS

INTRONICS

Intronics Power, Inc.

B101B

SMOKEDETECTORS

SYSTEMSENSOR

Systemsensor advanced ideas.

B101BR

SMOKEDETECTORS

SYSTEMSENSOR

Systemsensor advanced ideas.

B101S

MINISURFACEMOUNTGLASSPASSIVATEDSINGLE-PHASEBRIDGERECTIFIER

FEATURES •PlasticmaterialusedcarriesUnderwritersLaboratoryrecognition94V-O •Lowleakage •Surgeoverloadrating--30amperespeak •Idealforprintedcircuitboard •LeadfreeincompliancewithEURoHS2011/65/EUdirective MECHANICALDATA •Case:Reliablelowcostconstructionut

PANJITPan Jit International Inc.

強茂強茂股份有限公司

BA101

BA/BCSeries:1.5-6.0WattsSingleandDualOutputs

FEATURES •InputπFilter •FullyRegulatedOutputs •IndustryStandardPinouts •5,12,24,28,and48VDCInputs •RippleandNoiseLessThan50mVpp •Input/OutputIsolation

ETCList of Unclassifed Manufacturers

未分类制造商

BAS101

High-voltageswitchingdiodes

Generaldescription High-voltageswitchingdiodes,encapsulatedinaSOT23smallSurface-MountedDevice(SMD)plasticpackage. Features ■Highswitchingspeed:trr≤50ns ■Lowcapacitance:Cd≤2pF ■Lowleakagecurrent ■Reversevoltage:VR≤300V ■Repetitivepeakreversevoltage:

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

BAS101

High-voltageswitchingdiodes

1.1Generaldescription High-voltageswitchingdiodes,encapsulatedinaSOT23smallSurface-Mounted Device(SMD)plasticpackage. 1.2Features 1.3Applications Table1.Productoverview TypenumberPackageConfiguration NexperiaJEITA BAS101SOT23-single BAS101SSOT23-dualseries H

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BAS101S

High-voltageswitchingdiodes

Generaldescription High-voltageswitchingdiodes,encapsulatedinaSOT23smallSurface-MountedDevice(SMD)plasticpackage. Features ■Highswitchingspeed:trr≤50ns ■Lowcapacitance:Cd≤2pF ■Lowleakagecurrent ■Reversevoltage:VR≤300V ■Repetitivepeakreversevoltage:

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

BAS101S

High-voltageswitchingdiodes

1.1Generaldescription High-voltageswitchingdiodes,encapsulatedinaSOT23smallSurface-Mounted Device(SMD)plasticpackage. 1.2Features 1.3Applications Table1.Productoverview TypenumberPackageConfiguration NexperiaJEITA BAS101SOT23-single BAS101SSOT23-dualseries H

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

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