AWT6167R中文资料ANADIGICS数据手册PDF规格书

PRODUCT DESCRIPTION

As with previous generations, the AWT6167R integrated CMOS power control scheme simplifies the design of the transmitter by eliminating the need for external power control circuitry.

The AWT6167R input and output terminals are internal matched to 50 ohms and DC blocked, reducing the number of external components required in the final application. Both PA die, GSM900 and DCS, are fabricated using state of the art InGaP HBT technology, known for it is proven reliability and temperature stability.

FEATURES

• Integrated Vreg (regulated supply)

• Harmonic Performance ≤ -20 dBm

• High Efficiency (PAE) at Pmax:

-GSM900, 55

-DCS, 53

• +35 dBm GSM900 Output Power at 3.5 V

• +33 dBm DCS Output Power at 3.5 V

• 55 dB Dynamic Range

• GPRS Class 12 Capable

• RoHS Compliant Package, 250°C MSL-3

APPLICATIONS

• Dual/Tri/Quad Band Handsets & PDAs