AWB7229数据手册RF/IF射频/中频RFID的射频放大器规格书PDF

描述 Description

Please note: this product is being discontinued and is not recommended for new designs.

The AWB7229 is a fully matched, Multi-Chip-Module(MCM) designed for picocell, femtocell, and customerpremises equipment (CPE) applications. Consisting oftwo parallel path high linearity, high efficiency poweramplifiers, the device meets the extremely demandingneeds of small cell infrastructure architectures.Designed for LTE, WCDMA and HSDPA air interfacesoperating in the 925 MHz to 960 MHz bands, theAWB7229 delivers up to +27 dBm of LTE (E-TM1.1)power through an external 90-degree hybrid coupler,with an ACPR of -47 dBc. The device operates froma convenient +4.5 V supply and provides 29 dB ofRF gain. The AWB7229 is manufactured using anadvanced InGaP HBT MMIC technology offeringstate-of-the-art reliability, temperature stability, andruggedness. Its 7 mm x 7 mm x 1.3 mm surfacemount package incorporates RF matching networksoptimized for output power, efficiency, and linearity ina 50 Ω system.

特性 Features

• InGaP HBT Technology
• -47 dBc ACPR @ ±10 MHz, +27 dBm
• 29 dB Gain
• High Efficiency
• Low Transistor Junction Temperature
• Matched for a 50 Ω System
• Low Profile Miniature Surface Mount Package; RoHS Compliant
• Multi-Carrier Capability

简介

AWB7229属于RF/IF射频/中频RFID的射频放大器。由制造生产的AWB7229射频放大器在射频应用中，射频放大器产品可用于信号增益和缓冲。这些产品与通用运算放大器的不同之处在于，它们通常适用于更高的频率，更倾向于提供不可调节的固定增益，并且输入或输出阻抗值符合常用传输线特性阻抗。