30 ~ 1200 MHz Wide-band Medium Power Amplifier MMIC

文件：402.65 Kbytes 页数：13 Pages

ASB

30 ~ 1200 MHz Wide-band Medium Power Amplifier MMIC

文件：733.52 Kbytes 页数：13 Pages

ASB

30 ~ 1200 MHz Wide-band Medium Power Amplifier MMIC

文件：733.52 Kbytes 页数：13 Pages

ASB

Damper diodes

DESCRIPTION Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellen

文件：66.22 Kbytes 页数：8 Pages

PHI

PHI

Silicon Rectifier Schottky Barrier, General Purpose

Description: The NTE578 is a general purpose rectifier employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–v

文件：17.2 Kbytes 页数：2 Pages

NTE

Unity gain level programmable low power compandor

DESCRIPTION The SA578 is a unity gain level programmable compandor designed for low power applications. The SA578 is internally configured as an expandor and a compressor to minimize external component count. The summing amplifiers of the SA578 have 600Ω drive capability and the inverting input

文件：63.49 Kbytes 页数：7 Pages

PHI

PHI