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AUIRLR120N中文资料PDF规格书
AUIRLR120N规格书详情
AUTOMOTIVE GRADE
Description
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
• Advanced Planar Technology
• Logic-Level Gate Drive
• Low On-Resistance
• Dynamic dV/dT Rating
• 175ºC Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Repetitive Avalanche Allowed up to Tjmax
• Lead-Free, RoHS Compliant
• Automotive Qualified*
产品属性
- 型号：
AUIRLR120N
- 功能描述：
MOSFET AUTO 100V 1 N-CH HEXFET 185mOhms
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ir |
dc12 |
原厂封装 |
675 |
INSTOCK:75/tube/dpak |
询价 | ||
Infineon Technologies |
23+ |
TO-252 |
13000 |
15年原装正品企业 |
询价 | ||
INFINEON |
23+ |
NA |
100 |
现货!就到京北通宇商城 |
询价 | ||
INFINEON |
2019 |
D-PAK |
55000 |
原装进口假一罚十 |
询价 | ||
INFINEON |
2022+ |
TO252 |
57550 |
询价 | |||
Infineon |
2022+ |
原厂原包装 |
6800 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
Infineon(英飞凌) |
23+ |
TO252 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
vishay |
2023+ |
TO-252 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
Infineon Technologies |
23+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
询价 | ||
INFINEON |
21+ |
标准封装 |
619 |
保证原装正品,需要联系张小姐 13544103396 微信同号 |
询价 |
