2.9 GHz to 5.8 GHz SiGe Frequency Doubler IC

Description The 5.8-GHz frequency doubler IC is designed with Atmel’s Silicon-Germanium (SiGe) process and provides a high conversion gain. The device consists of a doubler stage, a filter and a driver amplifier with an output power of 11 dBm. The output stage was realized using an open-collecto

文件：219.71 Kbytes 页数：8 Pages

ATMEL

爱特梅尔

2.9 GHz to 5.8 GHz SiGe Frequency Doubler IC

Description The 5.8-GHz frequency doubler IC is designed with Atmel’s Silicon-Germanium (SiGe) process and provides a high conversion gain. The device consists of a doubler stage, a filter and a driver amplifier with an output power of 11 dBm. The output stage was realized using an open-collecto

文件：219.71 Kbytes 页数：8 Pages

ATMEL

爱特梅尔

2.9 GHz to 5.8 GHz SiGe Frequency Doubler IC

Description The 5.8-GHz frequency doubler IC is designed with Atmel’s Silicon-Germanium (SiGe) process and provides a high conversion gain. The device consists of a doubler stage, a filter and a driver amplifier with an output power of 11 dBm. The output stage was realized using an open-collecto

文件：219.71 Kbytes 页数：8 Pages

ATMEL

爱特梅尔

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