Description

Process

The 5-GHz power amplifier is designed using Atmel’s Silicon-Germanium (SiGe) process and provides excellent noise performance as well as good power-added efficiency.

Circuitry

The PA consists of a 2-stage amplifier with a maximum output power of 28 dBm. The output stages were realized using an open-collector structure. The IC features 50-Ω input matching. Power-up/down and output level are controlled at bias control pin 6 (VCTL).

Features

• Frequency Range 5 GHz to 6 GHz

• POUT Maximum 28 dBm

• Gain Typically 19 dB

• VCC 3.0 V to 3.9 V

• Package: QFN16

• Current Consumption in Power Down Mode Typically ≤15 µA

Benefits

• Biasing Control Extends Battery Life Time

• Simple Input and Output Matching

• One Single Supply Voltage Required