Heavy duty switches & pilot lights offer both variety and reliability Endures harsh environments

文件：13.85927 Mbytes 页数：51 Pages

ETC1List of Unclassifed Manufacturers

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Plastic-Encapsulate MOSFETS

GENERAL DESCRIPTION DS(on) The BCL2311DW uses advanced trench technology to provide excellent R and low gate charge. The complementary MOSFETS form a high-speed power inverter and suitable for a multitude of applications.

文件：438.05 Kbytes 页数：6 Pages

GWSEMI

唯圣电子

Single-Channel Ultra-Fast Gate Driver For Automotive

Features ◼ AEC-Q100 Qualified(Note 1) ◼ Gate Driver Voltage Range 4.5 V to 5.5 V ◼ Minimum Input Pulse Width 1.25 ns (220 pF load) ◼ Typical Rise Time 0.65 ns (220 pF load) ◼ Typical Fall Time 0.70 ns (220 pF load) ◼ Built-in Undervoltage Lockout (UVLO) between VCC and GND ◼ Inverting and

文件：1.28101 Mbytes 页数：19 Pages

ROHM

罗姆

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -20V, -3.5A, RDS(ON) = 85mΩ @VGS = -4.5V. RDS(ON) = 130mΩ @VGS = -2.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ TSOP-6 package.

文件：131.72 Kbytes 页数：4 Pages

CET

华瑞