ATF10136中文资料安捷伦科技数据手册PDF规格书

描述 Description

The ATF-10136 is a high performance gallium arsenide Schottky-barrier gate field effect transistor housed in a cost effective microstrip package. Its premium noise figure makes this device appropriate for use in the first stage of low noise amplifiers operat ing in the 0.5-12 GHz frequency range.

特性 Features

• Low Noise Figure: 0.5 dB Typical at 4 GHz

• Low Bias: VDS= 2 V, IDS␣ =␣ 20 mA

• High Associated Gain: 13.0 dB Typical at 4 GHz

• High Output Power: 20.0 dBm Typical P1 dB at 4 GHz

• Cost Effective Ceramic Microstrip Package

• Tape-and Reel Packaging Option Available[1]