ATF-21186-STR资料使用说明书原装现货HP-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
ATF-21186-STR	文件：75.35 Kbytes Page：8 Pages	0.5-6 GHz General Purpose Gallium Arsenide FET Description Hewlett–Packard’s ATF-21186 is a low cost Gallium Arsenide Schottky barrier-gate field effect transistor housed in a surface mount plastic package. This general purpose device is designed for use in low noise amplifiers, gain stages, driver amplifiers, and oscillators operating over t 文件：75.35 Kbytes 页数：8 Pages	HP 安捷伦	HP
ATF-21186	文件：75.35 Kbytes Page：8 Pages	0.5-6 GHz General Purpose Gallium Arsenide FET Description Hewlett–Packard’s ATF-21186 is a low cost Gallium Arsenide Schottky barrier-gate field effect transistor housed in a surface mount plastic package. This general purpose device is designed for use in low noise amplifiers, gain stages, driver amplifiers, and oscillators operating over t 文件：75.35 Kbytes 页数：8 Pages	HP 安捷伦	HP
ATF22LV10CQZ-30XU	文件：0 bytes Page：0 Pages	TSSOP-24	MICROCHIP/微芯上传：深圳市明嘉莱科技有限公司	MICROCHIP/微芯
ATF22V10C-15PU	文件：0 bytes Page：0 Pages	DIP-24	ATMEL 爱特梅尔上传：深圳市毅创腾电子科技有限公司	ATMEL
ATF22V10C-15PU	文件：0 bytes Page：0 Pages	DIP	ATMEL 爱特梅尔上传：深圳市卓越微芯电子有限公司	ATMEL

更多ATF-21186-STR供应商更新时间2026-1-29 9:01:00