2-16 GHz Low Noise Gallium Arsenide FET

Description The ATF-13336 is a high performance gallium arsenide Schottky barrier-gate field effect transistor housed in a cost effective microstrip package. Its premium noise figure makes this device appropriate for use in low noise amplifiers operating in the 2-16␣ GHz frequency range. Thi

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HP

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2–16 GHz Low Noise Gallium Arsenide FET

Description\nThe ATF-13336 is a high performance gallium arsenide Schottky barrier-gate field effect transistor housed in a cost effective microstrip package. Its premium noise figure makes this device appropriate for use in low noise amplifiers operating in the 2-16␣ GHz frequency range.\nThis GaAs • Low Noise Figure:\n   1.4 dB Typical at 12 GHz\n• High Associated Gain:\n   9.0 dB Typical at 12 GHz\n• High Output Power:\n   17.5 dBm Typical P 1 dB at 12 GHz\n• Cost Effective Ceramic\n   Microstrip Package\n• Tape-and-Reel Packaging\n   Option Available[1] ;

Agilent

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2-16 GHz Low Noise Gallium Arsenide FET

Description The ATF-13336 is a high performance gallium arsenide Schottky barrier-gate field effect transistor housed in a cost effective microstrip package. Its premium noise figure makes this device appropriate for use in low noise amplifiers operating in the 2-16␣ GHz frequency range. Thi

文件：46.74 Kbytes 页数：3 Pages

HP

安捷伦

2-16 GHz Low Noise Gallium Arsenide FET

Description The ATF-13336 is a high performance gallium arsenide Schottky barrier-gate field effect transistor housed in a cost effective microstrip package. Its premium noise figure makes this device appropriate for use in low noise amplifiers operating in the 2-16␣ GHz frequency range. Thi

文件：46.74 Kbytes 页数：3 Pages

HP

安捷伦