AT8551/TR中文资料ANALOGTECHNOLOGIES数据手册PDF规格书

FEATURES

 Upgraded Drop-in Replacement for AD8551

 Low Offset Voltage: 1μV (typ) 5μV (max)

 Input Offset Drift: 0.005μV/°C (max)

 High Gain Bandwidth Product: 4.5MHz

 Rail-to-Rail Input and Output

 High Gain, CMRR & PSRR: ≥130dB

 High Slew Rate: 2.7V/μs

 Low Noise: 0.75μVP-P (0.01~10Hz)

 Low Power Consumption: 640μA/op amp

 Overload Recovery Time: 1μs

 Low Supply Voltage: +2.7V to +5.5V

 No External Capacitors Required

 Extended Temperature: −40°C to +125°C

DESCRIPTION

This AT855x family includes single (AT8551) and dual

(AT8551) general-purpose CMOS operational

amplifiers that provides ultralow noise, offset and

power. The AT8551 use auto-zero techniques to

simultaneously provide very low offset voltage (5μV

max) and near-zero drift over time and temperature.

This miniature, high-precision operational amplifiers

offset high input impedance and rail-to-rail input and

rail-to-rail output swing. With high gain-bandwidth

product of 4.5MHz and slew rate of 2.7V/μs.

This op amp operates as low as +2.7V (±1.35) and up

to +5.5V (±2.75V). The AT8551 single amplifier is

available in 5-lead SOT23, 8-lead MSOP8 and 8-lead

SOIC packages, The AT8552 dual amplifier is available

in 8-lead SOIC and 8-lead MSOP8 narrow surface

mount packages. The AT8551/AT8552 (dual version)

are specified for the extended industrial and

automotive temperature range (−40°C to 125°C).