AT49BV8192T中文资料爱特梅尔数据手册PDF规格书

描述 Description

The AT49BV8192 and AT49LV8192 are 3-volt, 8-megabit Flash Memories organized as 512K words of 16 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 67 mW at 2.7V read. When deselected, the CMOS standby current is less than 50 µA.

The device contains a user-enabled “boot block” protection feature. Two versions of the feature are available: the AT49BV/LV8192 locates the boot block at lowest order addresses (“bottom boot”); the AT49BV/LV8192T locates it at highest order addresses (“top boot”)

特性 Features

• Low Voltage Operation

– 2.7V Read

– 5V Program/Erase

• Fast Read Access Time - 120 ns

• Internal Erase/Program Control

• Sector Architecture

– One 8K Words (16K bytes) Boot Block with Programming Lockout

– Two 8K Words (16K bytes) Parameter Blocks

– One 488K Words (976K bytes) Main Memory Array Block

• Fast Sector Erase Time - 10 seconds

• Word-By-Word Programming - 30 µs/Word

• Hardware Data Protection

• DATA Polling For End Of Program Detection

• Low Power Dissipation

– 25 mA Active Current

– 50 µA CMOS Standby Current

• Typical 10,000 Write Cycles