AT49BV8011T中文资料爱特梅尔数据手册PDF规格书

Description

The AT49BV/LV8011(T) is a 2.7- to 3.3-volt 8-megabit Flash memory organized as 524,288 words of 16 bits each or 1,048,576 bytes of 8 bits each. The x16 data appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 22 sectors for erase operations. The device is offered in 48-pin TSOP and 48-ball CBGA packages.

Features

• Single Supply for Read and Write: 2.7V to 3.3V (BV), 3.0V to 3.3V (LV)

• Access Time – 90 ns

• Sector Erase Architecture

Fourteen 32K Word (64K Byte) Sectors with Individual Write Lockout

Two 16K Word (32K Byte) Sectors with Individual Write Lockout

Two 8K Word (16K Byte) Sectors with Individual Write Lockout

Four 4K Word (8K Byte) Sectors with Individual Write Lockout

• Fast Word Program Time – 20 µs

• Fast Sector Erase Time – 200 ms

• Dual Plane Organization, Permitting Concurrent Read while Program/Erase

Memory Plane A: Four 4K Word, Two 8K Word and Two 16K Word Sectors

Memory Plane B: Fourteen 32K Word Sectors

• Erase Suspend Capability

– Supports Reading/Programming Data from Any Sector by Suspending Erase of Any Different Sector

• Low-power Operation

– 25 mA Active

– 10 µA Standby

• Data Polling, Toggle Bit, Ready/Busy for End of Program Detection

• Optional VPP Pin for Fast Programming

• RESET Input for Device Initialization

• Sector Program Unlock Command

• TSOP and CBGA Package Options

• Top or Bottom Boot Block Configuration Available