AT49BV160T集成电路（IC）的存储器规格书PDF中文资料

描述 Description

The AT49BV/LV16X(T) is a 3.0-volt 16-megabit Flash memory organized as 1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. The x16 data appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 39 sectors for erase operations. The device is offered in a 48-lead TSOP, 45-ball and 48-ball CBGA packages. The device has CE and OE control signals to avoid any bus contention. This device can be read or reprogrammed using a single 2.65V power supply, making it ideally suited for in-system programming.

特性 Features

• Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV)

• Access Time – 70 ns

• Sector Erase Architecture

– Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout

– Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

• Fast Word Program Time – 20 µs

• Fast Sector Erase Time – 300 ms

• Suspend/Resume Feature for Erase and Program

– Supports Reading and Programming from Any Sector by Suspending Erase of a

Different Sector

– Supports Reading Any Byte/Word by Suspending Programming of Any Other

Byte/Word

• Low-power Operation

– 30 mA Active

– 10 µA Standby

• Data Polling, Toggle Bit, Ready/Busy for End of Program Detection

• VPP Pin for Write Protection and Accelerated Program/Erase Operations

• RESET Input for Device Initialization

• Sector Lockdown Support

• TSOP and CBGA Package Options

• Top or Bottom Boot Block Configuration Available

• 128-bit Protection Register