16-megabit (1M x 16) 3-volt Only Flash Memory

Description The AT49BV160C(T) is a 2.7-volt 16-megabit Flash memory organized as 1,048,576 words of 16 bits each. The memory is divided into 39 sectors for erase operations. The device is offered in a 48-lead TSOP and a 46-ball CBGA package. The device has CE and OE control signals to avoid any b

文件：236.15 Kbytes 页数：30 Pages

ATMEL

爱特梅尔

16-megabit (1M x 16) 3-volt Only Flash Memory

Description The AT49BV160C(T) is a 2.7-volt 16-megabit Flash memory organized as 1,048,576 words of 16 bits each. The memory is divided into 39 sectors for erase operations. The device is offered in a 48-lead TSOP and a 46-ball CBGA package. The device has CE and OE control signals to avoid any b

文件：236.15 Kbytes 页数：30 Pages

ATMEL

爱特梅尔

16-megabit (1M x 16) 3-volt Only Flash Memory

Description The AT49BV160C(T) is a 2.7-volt 16-megabit Flash memory organized as 1,048,576 words of 16 bits each. The memory is divided into 39 sectors for erase operations. The device is offered in a 48-lead TSOP and a 46-ball CBGA package. The device has CE and OE control signals to avoid any b

文件：236.15 Kbytes 页数：30 Pages

ATMEL

爱特梅尔

16-megabit (1M x 16) 3-volt Only Flash Memory

Description The AT49BV160C(T) is a 2.7-volt 16-megabit Flash memory organized as 1,048,576 words of 16 bits each. The memory is divided into 39 sectors for erase operations. The device is offered in a 48-lead TSOP and a 46-ball CBGA package. The device has CE and OE control signals to avoid any b

文件：236.15 Kbytes 页数：30 Pages

ATMEL

爱特梅尔

16-megabit (1M x 16) 3-volt Only Flash Memory

Description The AT49BV160C(T) is a 2.7-volt 16-megabit Flash memory organized as 1,048,576 words of 16 bits each. The memory is divided into 39 sectors for erase operations. The device is offered in a 48-lead TSOP and a 46-ball CBGA package. The device has CE and OE control signals to avoid any b

文件：236.15 Kbytes 页数：30 Pages

ATMEL

爱特梅尔

16-megabit (1M x 16) 3-volt Only Flash Memory

Description\nThe AT49BV160C(T) is a 2.7-volt 16-megabit Flash memory organized as 1,048,576 words of 16 bits each. The memory is divided into 39 sectors for erase operations. The device is offered in a 48-lead TSOP and a 46-ball CBGA package. The device has CE and OE control signals to avoid any bus • Single Voltage Read/Write Operation: 2.65V to 3.6V\n• Access Time – 70 ns\n• Sector Erase Architecture\n   – Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout\n   – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout\n• Fast Word Program Time – 12 µs\n• Fast Sector E;

Microchip

微芯科技

Package：48-TFSOP（0.724"，18.40mm 宽）；包装：管件 类别：集成电路（IC） 存储器 描述：IC FLASH 16MBIT PARALLEL 48TSOP

MICROCHIP

微芯科技

Package：48-TFSOP（0.724"，18.40mm 宽）；包装：托盘 类别：集成电路（IC） 存储器 描述：IC FLASH 16MBIT PARALLEL 48TSOP

MICROCHIP

微芯科技

Package：46-VFBGA，CSBGA；包装：管件 类别：集成电路（IC） 存储器 描述：IC FLASH 16MBIT PARALLEL 46CBGA

MICROCHIP

微芯科技