AT49BV1604T中文资料爱特梅尔数据手册PDF规格书

Description

The AT49BV16X4(T) is 2.7- to 3.3-volt 16-megabit Flash memory organized as 1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. The x16 data appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 40 sectors for erase operations. The device is offered in 48-pin TSOP and 48-ball µBGA packages.

Features

• 2.7V to 3.3V Read/Write

• Access Time - 90 ns

• Sector Erase Architecture

– Thirty 32K Word (64K Byte) Sectors with Individual Write Lockout

– Eight 4K Word (8K Byte) Sectors with Individual Write Lockout

– Two 16K Word (32K Byte) Sectors with Individual Write Lockout

• Fast Word Program Time - 20 µs

• Fast Sector Erase Time - 200 ms

• Dual Plane Organization, Permitting Concurrent Read while Program/Erase

Memory Plane A: Eight 4K Word, Two 16K Word and Six 32K Word Sectors

Memory Plane B: Twenty-four 32K Word Sectors

• Erase Suspend Capability

– Supports Reading/Programming Data from Any Sector by Suspending Erase of Any Different Sector

• Low-power Operation

– 25 mA Active

– 10 µA Standby

• Data Polling, Toggle Bit, Ready/Busy for End of Program Detection

• Optional VPP Pin for Fast Programming

• RESET Input for Device Initialization

• Sector Program Unlock Command

• TSOP, CBGA, and µBGA Package Options

• Top or Bottom Boot Block Configuration Available