AT45DB321E-MUF2B-T中文资料ETC数据手册PDF规格书

[Adesto Technologies]

描述 Description

The Adesto® AT45DB321E is a 2.3V minimum, serial-interface sequential access Flash memory ideally suited for a wide variety of digital voice, image, program code, and data storage applications. The AT45DB321E also supports the RapidS serial interface for applications requiring very high speed operation. Its 34,603,008 bits of memory are organized as 8,192 pages of 512 bytes or 528 bytes each. In addition to the main memory, the AT45DB321E also contains two SRAM buffers of 512/528 bytes each.

特性 Features

 Single 2.3V - 3.6V supply

 Serial Peripheral Interface (SPI) compatible

 Supports SPI modes 0 and 3

 Supports RapidS™ operation

 Continuous read capability through entire array

 Up to 85MHz

 Low-power read option up to 15MHz

 Clock-to-output time (tV) of 6ns maximum

 User configurable page size

 512 bytes per page

 528 bytes per page (default)

 Page size can be factory pre-configured for 512 bytes

 Two fully independent SRAM data buffers (512/528 bytes)

 Flexible programming options

 Byte/Page Program (1 to 512/528 bytes) directly into main memory

 Buffer Write

 Buffer to Main Memory Page Program

 Flexible erase options

 Page Erase (512/528 bytes)

 Block Erase (4KB)

 Sector Erase (64KB)

 Chip Erase (32-Mbits)

 Program and Erase Suspend/Resume

 Advanced hardware and software data protection features

 Individual sector protection

 Individual sector lockdown to make any sector permanently read-only

 128-byte, One-Time Programmable (OTP) Security Register

 64 bytes factory programmed with a unique identifier

 64 bytes user programmable

 Hardware and software controlled reset options

 JEDEC Standard Manufacturer and Device ID Read

 Low-power dissipation

 400nA Ultra-Deep Power-Down current (typical)

 3μA Deep Power-Down current (typical)

 25μA Standby current (typical)

 11mA Active Read current (typical)

 Endurance: 100,000 program/erase cycles per page minimum

 Data retention: 20 years

 Green (Pb/Halide-free/RoHS compliant) packaging options

 8-lead SOIC (0.208 wide)

 8-pad Ultra-thin DFN (5 x 6 x 0.6mm)

 9-ball Ultra-thin UBGA (6 x 6 x 0.6mm)