4-Megabit 512K x 8 5-volt Only 256-Byte Sector CMOS Flash Memory

Description The AT29C040A is a 5-volt only in-system Flash Programmable and Erasable Read Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology, the device offers access times up to 90 ns, and a

文件：234.75 Kbytes 页数：11 Pages

Atmel

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4-Megabit 512K x 8 5-volt Only 256-Byte Sector CMOS Flash Memory

Description\nThe AT29C040A is a 5-volt-only in-system Flash Programmable and Erasable Read Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology, the device offers access times up to 100 ns, and a • Fast Read Access Time - 100 ns\n• Sector Program Operation Single Cycle Reprogram (Erase and Program) 2048 Sectors (256 bytes/sector)\n• Internal Program Control and Timer\n• Two 16 KB Boot Blocks with Lockout\n• DATA Polling for End of Program Detection\n• Typical Endurance 10,000 Cycles\n• CMOS;

Microchip

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4-Megabit 512K x 8 5-volt Only 256-Byte Sector CMOS Flash Memory

Description The AT29C040A is a 5-volt only in-system Flash Programmable and Erasable Read Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology, the device offers access times up to 90 ns, and a

文件：234.75 Kbytes 页数：11 Pages

Atmel

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4-Megabit 512K x 8 5-volt Only 256-Byte Sector CMOS Flash Memory

Description The AT29C040A is a 5-volt only in-system Flash Programmable and Erasable Read Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology, the device offers access times up to 90 ns, and a

文件：234.75 Kbytes 页数：11 Pages

Atmel

爱特梅尔

4-Megabit 512K x 8 5-volt Only 256-Byte Sector CMOS Flash Memory

Description The AT29C040A is a 5-volt only in-system Flash Programmable and Erasable Read Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology, the device offers access times up to 90 ns, and a

文件：234.75 Kbytes 页数：11 Pages

Atmel

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4-Megabit 512K x 8 5-volt Only 256-Byte Sector CMOS Flash Memory

Description The AT29C040A is a 5-volt only in-system Flash Programmable and Erasable Read Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology, the device offers access times up to 90 ns, and a

文件：234.75 Kbytes 页数：11 Pages

Atmel

爱特梅尔

4-Megabit 512K x 8 5-volt Only 256-Byte Sector CMOS Flash Memory

Description The AT29C040A is a 5-volt only in-system Flash Programmable and Erasable Read Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology, the device offers access times up to 90 ns, and a

文件：234.75 Kbytes 页数：11 Pages

Atmel

爱特梅尔

4-Megabit 512K x 8 5-volt Only 256-Byte Sector CMOS Flash Memory

Description The AT29C040A is a 5-volt only in-system Flash Programmable and Erasable Read Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology, the device offers access times up to 90 ns, and a

文件：234.75 Kbytes 页数：11 Pages

Atmel

爱特梅尔

4-Megabit 512K x 8 5-volt Only 256-Byte Sector CMOS Flash Memory

Description The AT29C040A is a 5-volt only in-system Flash Programmable and Erasable Read Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology, the device offers access times up to 90 ns, and a

文件：234.75 Kbytes 页数：11 Pages

Atmel

爱特梅尔

4-megabit (512K x 8) 5-volt Only 256-byte Sector Flash Memory

Description The AT29C040A is a 5-volt only in-system Flash Programmable and Erasable Read Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology, the device offers access times up to 90 ns, and a

文件：258.49 Kbytes 页数：17 Pages

Atmel

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