1 Megabit 128K x 8 Single 2.7-volt Battery-Voltage CMOS Flash

Description The AT29BV010A is a 2.7-volt only in-system Flash Programmable and Erasable Read Only Memory (Flash). Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technol ogy, the device offers access times to 120 ns, and

文件：490.74 Kbytes 页数：10 Pages

Atmel

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1 Megabit 128K x 8 Single 2.7-volt Battery-Voltage CMOS Flash

Description The AT29BV010A is a 2.7-volt only in-system Flash Programmable and Erasable Read Only Memory (Flash). Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technol ogy, the device offers access times to 120 ns, and

文件：490.74 Kbytes 页数：10 Pages

Atmel

爱特梅尔

1 Megabit 128K x 8 Single 2.7-volt Battery-Voltage CMOS Flash

Description The AT29BV010A is a 2.7-volt only in-system Flash Programmable and Erasable Read Only Memory (Flash). Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technol ogy, the device offers access times to 120 ns, and

文件：490.74 Kbytes 页数：10 Pages

Atmel

爱特梅尔

1 Megabit 128K x 8 Single 2.7-volt Battery-Voltage CMOS Flash

Description The AT29BV010A is a 2.7-volt only in-system Flash Programmable and Erasable Read Only Memory (Flash). Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technol ogy, the device offers access times to 120 ns, and

文件：490.74 Kbytes 页数：10 Pages

Atmel

爱特梅尔