1 Megabit 128K x 8 Low Voltage Paged CMOS E2PROM

Description The AT28LV010 is a high-performance 3-volt only Electrically Erasable and Program mable Read-Only Memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with powe

文件：498.06 Kbytes 页数：9 Pages

ATMEL

爱特梅尔

1 Megabit 128K x 8 Low Voltage Paged CMOS E2PROM

Description The AT28LV010 is a high-performance 3-volt only Electrically Erasable and Program mable Read-Only Memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with powe

文件：498.06 Kbytes 页数：9 Pages

ATMEL

爱特梅尔

1-Megabit (128K x 8) Low Voltage Paged Parallel EEPROMs

文件：355.32 Kbytes 页数：15 Pages

ATMEL

爱特梅尔

1 Megabit 128K x 8 Low Voltage Paged CMOS E2PROM

Description The AT28LV010 is a high-performance 3-volt only Electrically Erasable and Program mable Read-Only Memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with powe

文件：498.06 Kbytes 页数：9 Pages

ATMEL

爱特梅尔