256K (32K x 8) Paged Parallel EEPROM

Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus

文件：668.48 Kbytes 页数：27 Pages

Atmel

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256K 32K x 8 Paged CMOS E2PROM

Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus

文件：762.46 Kbytes 页数：14 Pages

Atmel

爱特梅尔

256K 32K x 8 Paged CMOS E2PROM

Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus

文件：762.46 Kbytes 页数：14 Pages

Atmel

爱特梅尔

256K (32K x 8) Paged Parallel EEPROM

Description The AT28C256 is a high-performance electrically erasable and programmable read only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of jus

文件：668.48 Kbytes 页数：27 Pages

Atmel

爱特梅尔