AT28C16-T中文资料爱特梅尔数据手册PDF规格书

描述 Description

The AT28C16-T is the ideal nonvolatile attribute memory: it is a low power, 5-volt-only byte writable nonvolatile memory (EEPROM). Standby current is typically less than 100 µA. The AT28C16-T is written like a Static RAM, eliminating complex programming algorithms. The fast write cycle times of 1 ms, allow quick card reconfiguration in-system. Data retention is specified as 10 years minimum, precluding the necessity for batteries. Three access times have been specified to allow for varying layers of buffering between the memory and the PCMCIA interface.

The AT28C16-T is accessed like a Static RAM for read and write operations. During a byte write, the address and data are latched internally. Following the initiation of a write cycle, the device will go to a busy state and automatically write the latched data using an internal control timer. The device provides two methods for detecting the end of a write cycle; the RDY/BUSY output and DATA POLLING of I/O7.

特性 Features

• Ideal Rewritable Attribute Memory

• Simple Write Operation

– Self-Timed Byte Writes

– On-chip Address and Data Latch for SRAM-like Write Operation

– Fast Write Cycle Time - 1 ms

– 5-Volt-Only Nonvolatile Writes

• End of Write Detection

– RDY/BUSY Output

– DATA Polling

• High Reliability

– Endurance: 100,000 Write Cycles

– Data Retention: 10 Years Minimum

• Single 5-Volt Supply for Read and Write

• Very Low Power

– 30 mA Active Current

– 100 µA Standby Current