1 Megabit 128K x 8 Paged CMOS E2PROM

The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m

文件：570.6 Kbytes 页数：11 Pages

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

Package：32-DIP（0.600"，15.24mm）；包装：管件 类别：集成电路（IC） 存储器 描述：IC EEPROM 1MBIT PARALLEL 32DIP

Microchip

微芯科技

1 Megabit 128K x 8 Paged CMOS E2PROM

The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m

文件：570.6 Kbytes 页数：11 Pages

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

1 Megabit 128K x 8 Paged CMOS E2PROM

The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m

文件：570.6 Kbytes 页数：11 Pages

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

5 Volt, Byte Alterable E2PROM

文件：127.06 Kbytes 页数：25 Pages

Xicor

Xicor Inc.