1 Megabit 128K x 8 Paged CMOS E2PROM

The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m

文件：570.6 Kbytes 页数：11 Pages

ATMEL

爱特梅尔

1 Megabit 128K x 8 Paged CMOS E2PROM

文件：657.33 Kbytes 页数：11 Pages

ATMEL

爱特梅尔

1 Megabit 128K x 8 Paged CMOS E2PROM

The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m

文件：570.6 Kbytes 页数：11 Pages

ATMEL

爱特梅尔

1 Megabit 128K x 8 Paged CMOS E2PROM

The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m

文件：570.6 Kbytes 页数：11 Pages

ATMEL

爱特梅尔

1 Megabit 128K x 8 Paged CMOS E2PROM

The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m

文件：570.6 Kbytes 页数：11 Pages

ATMEL

爱特梅尔

1 Megabit 128K x 8 Paged CMOS E2PROM

The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m

文件：570.6 Kbytes 页数：11 Pages

ATMEL

爱特梅尔

1 Megabit 128K x 8 Paged CMOS E2PROM

The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m

文件：570.6 Kbytes 页数：11 Pages

ATMEL

爱特梅尔

1 Megabit 128K x 8 Paged CMOS E2PROM

The AT28C010 is a high-performance electrically-erasable and programmable read only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 m

文件：570.6 Kbytes 页数：11 Pages

ATMEL

爱特梅尔

1 Megabit 128K x 8 Paged CMOS E2PROM

文件：657.33 Kbytes 页数：11 Pages

ATMEL

爱特梅尔

1 Megabit 128K x 8 Paged CMOS E2PROM

文件：657.33 Kbytes 页数：11 Pages

ATMEL

爱特梅尔