16K 2K x 8 Battery-Voltage CMOS E2PROM

Description The AT28BV16 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28BV16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. The AT28BV1

文件：398.08 Kbytes 页数：8 Pages

Atmel

爱特梅尔

16K (2K x 8) Battery-Voltage™ Parallel EEPROMs

Description\nThe AT28BV16 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28BV16 is a 16K memory\norganized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology.\nThe AT28BV16 • 2.7 to 3.6V Supply\n   – Full Read and Write Operation\n• Low Power Dissipation\n   – 8 mA Active Current\n   – 50 µA CMOS Standby Current\n• Read Access Time - 250 ns\n• Byte Write - 3 ms\n• Direct Microprocessor Control\n   – DATA Polling\n   – READ/BUSY Open Drain Output on TSOP\n• High Reliabi;

Microchip

微芯科技

16K 2K x 8 Battery-Voltage CMOS E2PROM

Description The AT28BV16 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28BV16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. The AT28BV1

文件：398.08 Kbytes 页数：8 Pages

Atmel

爱特梅尔

16K 2K x 8 Battery-Voltage CMOS E2PROM

Description The AT28BV16 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28BV16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. The AT28BV1

文件：398.08 Kbytes 页数：8 Pages

Atmel

爱特梅尔

16K 2K x 8 Battery-Voltage CMOS E2PROM

Description The AT28BV16 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28BV16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. The AT28BV1

文件：398.08 Kbytes 页数：8 Pages

Atmel

爱特梅尔

16K 2K x 8 Battery-Voltage CMOS E2PROM

Description The AT28BV16 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28BV16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. The AT28BV1

文件：398.08 Kbytes 页数：8 Pages

Atmel

爱特梅尔

16K 2K x 8 Battery-Voltage CMOS E2PROM

Description The AT28BV16 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28BV16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. The AT28BV1

文件：398.08 Kbytes 页数：8 Pages

Atmel

爱特梅尔

16K 2K x 8 Battery-Voltage CMOS E2PROM

Description The AT28BV16 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28BV16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. The AT28BV1

文件：398.08 Kbytes 页数：8 Pages

Atmel

爱特梅尔

16K 2K x 8 Battery-Voltage CMOS E2PROM

Description The AT28BV16 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28BV16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. The AT28BV1

文件：398.08 Kbytes 页数：8 Pages

Atmel

爱特梅尔

16K 2K x 8 Battery-Voltage CMOS E2PROM

Description The AT28BV16 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28BV16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. The AT28BV1

文件：398.08 Kbytes 页数：8 Pages

Atmel

爱特梅尔