AT25XE081D集成电路（IC）的存储器规格书PDF中文资料

Features

▪ Voltage Range: 1.65 V - 3.6 V

▪ 8-Mbit Flash Memory

▪ Flexible 256-byte page erase architecture

▪ Serial Peripheral Interface (SPI) compatible

• Supports SPI modes 0 and 3

• Supports SPI single mode operation (1-1-1)

• Supports dual output operation (1-1-2)

• Supports quad output operation (1-1-4)

• Supports quad XiP operation (1-4-4 and

0-4-4)

▪ 133 MHz maximum operating frequency: Clock-tooutput of 8 ns

▪ Flexible, optimized erase architecture for code

and data storage applications

• Uniform 256-Byte page erase

• Uniform 4-kByte block erase

• Uniform 32-kByte block erase

• Uniform 64-kByte block erase

• Full chip erase

▪ Flexible non-volatile block protection

▪ 1 x 128-byte factory-programmed unique identifier

▪ 3 x 128-byte, One Time Programmable (OTP)

security registers

▪ Flexible programming

• Byte/Page program (1 to 256 Bytes)

• Single command page buffer direct ReadModify-Write (page write with inclusive erase)

• Flexible 256-byte SRAM page buffer

operation

• Sequential program mode capability

▪ Software controlled Reset and Terminate

commands

▪ Erase program suspend resume

▪ Hardware reset option (through the HOLD pin)

▪ JEDEC hardware reset

▪ Low battery detect circuit

▪ Active interrupt device status capability

▪ Non-volatile status register configuration option

▪ JEDEC standard manufacturer and device ID read

methodology

▪ Serial Flash Discoverable Parameters (SFDP)

version 1.6

▪ Low power dissipation:

• 30 µA standby current (typical)

• 8.5 µA Deep Power-Down (DPD) current

(typical)

• 7 nA Ultra Deep Power Down (UDPD) current

(typical)

• 8.5 mA active read current (1-1-1 — 104 MHz)

• 8.5 mA program current

• 9.6 mA erase current

▪ User-configurable and auto I/O pin drive levels

▪ Endurance: 100,000 program/erase cycles

▪ Data Retention: 20 years

▪ -40 oC to +85 oC operation

▪ Industry standard green (Pb/Halide-free/RoHS

Compliant) Package Options

• 8-lead SOIC (150-mil)

• 8-lead SOIC (208-mil)

• 8-pad Ultra-thin DFN (2 x 3 x 0.6 mm)

• 8-ball WLCSP (3 x 2 x 3 ball matrix)

• Die/Wafer — Contact Renesas Electronics for

more information