AT25FF321A集成电路（IC）的存储器规格书PDF中文资料

Features

• Voltage Range: 1.65 V - 3.6 V

• 32-Mbit Flash Memory

• Serial Peripheral Interface (SPI) compatible

• Supports SPI modes 0 and 3

• Supports single input/output operations(1-1-1)

• Supports dual output operations (1-1-2)

• Supports quad output operations (1-1-4)

• Supports quad I/O operations (1-4-4)

• Supports XiP operations (1-4-4, 0-4-4)

• 133 MHz maximum operating frequency

• Clock-to-output of 8 ns

• Flexible, optimized erase architecture for code and data storage applications

• Uniform 4-kByte block erase

• Uniform 32-kByte block erase

• Uniform 64-kByte block erase

• Full chip erase

• Flexible non-volatile block protection

• 1 x 128-byte factory-programmed unique identifier

• 3 x 128-byte, One Time Programmable (OTP) security registers

• Flexible programming

• Byte/Page program (1 to 256 Bytes)

• Sequential program mode capability

• Erase program suspend resume

• Software controlled Reset and Terminate commands

• Hardware reset option (through HOLD pin)

• JEDEC hardware reset

• Non-volatile status register configuration option

• JEDEC standard manufacturer and device ID read methodology

• Serial Flash Discoverable Parameters (SFDP) version 1.6

• Low power dissipation:

• 26 µA standby current (typical)

• 7 µA Deep Power-Down (DPD) current (typical)

• 5 - 7 nA Ultra-Deep Power-Down (UDPD) current (typical)

• 8.3 mA active read current (1-1-1 — 104 MHz)

• 9.2 mA program current

• 10.2 mA erase current

• User-configurable and auto I/O pin drive levels

• Endurance: 100,000 program/erase cycles

• Data Retention: 20 years

• Temperature Range: -40 oC to +85 oC

• Industry standard green (Pb/Halide-free/RoHS Compliant) Package Options

• 8-lead SOIC (150-mil)

• 8-lead SOIC (208-mil)

• 8-pad Ultra-thin DFN (5 x 6 x 0.6 mm)

• 8-pad Ultra-thin Small Outline No-lead USON (3 x 4 x 0.55 mm)

• 12-ball WLCSP (3 x 2 x 3 ball matrix)

• Die in Wafer Form (DWF)