AT-64020中文资料Up to 4 GHz Linear Power Silicon Bipolar Transistor数据手册Broadcom规格书

描述 Description

The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO disk package for good thermal characteristics. This device is designed for use in medium power, wide band amplifer and oscillator applications operating over VHF, UHF and microwave frequencies.
Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metallization in the fabrication of these devices. The use of ion-implanted ballast resistors ensures uniform current distribution through the multiple emitter fngers.

特性 Features

• High Output Power:
   27.5 dBm Typical P1 dB at 2.0 GHz
   26.5 dBm Typical P1 dB at 4.0 GHz
• High Gain at 1 dB Compression:
   10.0 dB Typical G1 dB at 2.0 GHz
   6.5 dB Typical G1 dB at 4.0 GHz
• 35% Total Efciency
• Emitter Ballast Resistors
• Hermetic, Metal/Beryllia Package

简介

AT-64020属于分立半导体产品的晶体管-双极（BJT）-射频。由制造生产的AT-64020晶体管 - 双极（BJT）- 射频双极型射频晶体管是一种具有三个端子的半导体器件，用于在涉及射频的设备中开关或放大信号。双极结型晶体管设计为 NPN 或 PNP，特征参数包括晶体管类型、集射极击穿电压、跃迁频率、噪声系数、增益、功率、DC 电流增益和集电极电流。