AT-41435中文资料Up to 6 GHz Low Noise Silicon Bipolar Transistor数据手册Broadcom规格书

描述 Description

Avago’s AT-41435 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-41435 is housed in a cost effective surface mount 100 mil micro-X package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 14 emitter fnger interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and moderate power applications. This device is designed for use in low noise, wideband amplifer, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50Ω at 1 GHz, makes this device easy to use as a low noise amplifer.
The AT-41435 bipolar transistor is fabricated using Avago’s 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metalization in the fabrication of this device.

特性 Features

• Low Noise Figure:
   1.7 dB Typical at 2.0 GHz
   3.0 dB Typical at 4.0 GHz
• High Associated Gain:
   14.0 dB Typical at 2.0 GHz
   10.0 dB Typical at 4.0 GHz
• High Gain-Bandwidth Product: 8.0 GHz Typical fT
• Cost Effective Ceramic Microstrip Package