ASSR-601JV-000E数据手册继电器的固态继电器规格书PDF

描述 Description

The ASSR-601JV/JT is a high-voltage Photo MOSFET designed for automotive applications. ASSR-601JV/JT consists of an AlGaAs infrared light-emitting diode (LED) input stage optically coupled to a high-voltage output detector circuit. The detector consists of a high-speed photovoltaic diode array and driver circuitry to switch on/off two discrete high-voltage MOSFETs. The Photo MOSFET turns on (contact closes) with a minimum input current of 7 mA through the input LED. The Photo MOSFET turns off (contact opens) with an input voltage of 0.4V or less. The ASSR-601JV/JT is equivalent to 1FormA Electromechanical Relays (EMR) and is available in 16-pin SOIC package. The Broadcom R2Coupler provides reinforced insulation and reliability that delivers safe signal isolation critical in automotive and high-temperature industrial applications.

特性 Features

• Compact solid-state bidirectional signal switch
• Qualified to AEC-Q101 test guidelines
• Automotive temperature range:
• TA = –40°C to +105°C for ASSR-601JV  
• TA = –40°C to +125°C for ASSR-601JT

• Breakdown voltage, BVDSS: 1500V at IDSS = 250 μA 
• Avalanche rated MOSFETs
• Low off-state leakage:
• IOFF < 1 μA at VDS = 1000V for ASSR-601JV
• IOFF < 5 μA at VDS = 1000V for ASSR-601JT  

• On-resistance, RDS(ON) < 250Ω at ILOAD = 10 mA
• Turn on time: TON < 4 ms
• Turn off time: TOFF < 0.5 ms
• Compact, Surface-Mount Package: 300 mil SO-16  
• Creepage and clearance ≥ 8 mm (input-output)
• Creepage > 5 mm (between drain pins of MOSFETs)
• Worldwide Safety Approvals: 
• UL 1577 (5000 VRMS/1 min.) and CSA
• IEC/EN/DIN EN 60747-5-5: 1414VPEAK working voltage